NUMBER

TITLE

TR-92-001

Evolution and Status of Smart Power Technology

TR-92-002

Power Semiconductor Devices for the 1990s

TR-92-003

Impact of SiC on Power Devices

TR-92-004

Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices

TR-92-005

Power MOSFET Analysis and Optimization for Cryogenic Operation

TR-92-006

The Accumulation Mode Field Effect Transistor

TR-92-007

Fast Switching Power MOS-Gated EST and BRT Thyristors

TR-92-008

An Extended Trench Gate Power MOSFET Structure

TR-92-009

Cryogenic Operation of Asymmetric n-Channel IGBTs

TR-92-010

Comparison of DI and JI Lateral IGBTs

TR-92-011

The Minority Carrier Injection Controlled Field-Effect Transistor (MICFET) - A New MOS-Gated Power Transistor Structure

TR-92-012

Silicon Carbide High Voltage (400V) Schottky

NUMBER

                                                               TITLE

TR-92-013

Lateral Junction Isolated Emitter Switched Thyristor

TR-92-014

Mobility Study on RIE Etched Silicon Surfaces Using SF₆/O₂ Gas Etchants

TR-92-015

Comparison of Ultralow Specific On-Resistance UMOSFET Structures:  The ACCUFET, EXTFET, INVFET, and Conventional UMOSFETs

TR-92-016

Characterization of Thermal Oxides Grown on Trench Structures

TR-92-017

Trench-Gate Base-Resistance-Controlled Thyristors (UMOS-BRTs)

TR-92-018

Dielectrically Isolated Lateral Emitter Switched Thyristor

TR-92-019

Dielectrically Isolated Lateral High Voltage P-i-N Rectifiers for Power ICs

TR-92-020

Comparison of Ti and Pt Silicon carbide Schottky Rectifiers

TR-92-021

Abstracts of Papers Submitted to ISPSD'93

TR-92-022

Analysis and Optimization of Power MOSFETs for Cryogenic Operation

TR-92-023

An Emitter Switched Thyristor with Base Resistance Control

TR-92-024

Reactive Ion Etching of 3C-Monocrystalline Silicon Carbide

TR-93-001

Emitter Ballasting Effects in the Base Resistance Controlled Thyristor

TR-93-002

A Study of ESTs Short-Circuit SOA

TR-93-003

Cryogenic Operation of P-i-N Power Rectifiers

TR-93-004

Comparison of High Voltage Power Rectifier Structures

TR-93-005

Junction and Dielectrically Isolated Lateral ESTs for Power ICs

TR-93-006

Large Area MOS-Gated Power Devices Using Fusible Link Technology

TR-93-007

Edge Terminations for SiC Voltage Schottky Rectifiers

TR-93-008

Very low forward drop JBS Rectifiers Fabricated using Submicron Technology

TR-93-009

Modeling the On-state Characteristics of the Emitter Switched Thyristor

TR-93-010

Cryogenic Operation of Asymmetric n-channel IGBTs

TR-93-011

Modelling the Turn-Off Characteristics of the Base Resistance Controlled Thyristor (BRT)

TR-93-012

Electron Irradiation of Emitter Switched Thyristors

TR-93-013

Temperature Dependence of the Emitter Switched Thyristor Characteristics

    NUMBER

                                                             TITLE

TR-93-014

Abstracts Submitted to IEDM'93

TR-93-015

Trench MPS Rectifiers

TR-93-016

Cryogenic Operation of P-I-N Power Rectifiers

TR-93-017

Forward Biased Safe Operating Area of Emitter Switched Thyristors

TR-93-018

Low Forward Drop JBS Rectifiers Fabricated Using Submicron Technology

TR-93-019

Low Specific Resistivity Ohmic Contacts to 6H-Silicon Carbide

TR-93-020

The Trench MOS Barrier Schottky (TMBS) Rectifier

TR-93-021

High Temperature Performance of Dielectrically Isolated LDMOSFET, LIGBT and LEST

TR-93-022

3C-Monocrystalline SiC Reactive Ion Etching Using SF₆/0₂

TR-93-023

SiC Power UMOSFET; Design, Analysis, and Technological Feasibility

TR-93-024

Abstracts Submitted to ISPSD'94

TR-93-025

Electrical Properties of Thermal Oxide Grown on N-Type 6H-Silicon Carbide

TR-93-026

Power Semiconductor Devices for Variable Frequency Drives

TR-94-001

High Voltage SiC Schottky Rectifiers

TR-94-002

RESP Termination for High-Voltage 6H-SiC Schottky Rectifiers

TR-94-003

Effect of Surface Inhomogenities on the Electrical Characteristics of SiC Schottky Contacts

TR-94-004

Thermal Oxidation of 6H-Silicon Carbide at Enhanced Growth Rates

TR-94-005

High Temperature Performance of Dielectrically Isolated LDMOSFET:  Characterization, Simulation and Analysis

TR-94-006

A Comparison of High Frequency Cell Designs for High Voltage DMOSFETs

TR-94-007

A New IGBT Structure with a Wider Safe Operating Area (SOA)

TR-94-008

Comparison of RBSOA of ESTs with IGBTs and MCTs

TR-94-009

Cryogenic Operation of Power Bipolar Transistors

TR-94-010

Cryogenic Operation of Asymmetric Field Control Thyristors

TR-94-011

Electrical Properties of Thermal Oxide Grown on P-Type 6H- Silicon Carbide

TR-94-012

A Simple Edge Termination for Silicon Carbide Devices with Nearly Ideal Breakdown Voltage

TR-94-013

Large Area MOS-Gated Power Devices Using High-Current Fusible Links

TR-94-014

Large Area MOS-Gated Power Devices Using Fusible Link Technology

    NUMBER

                                                             TITLE

TR-94-015

The Trench MOS Barrier Schottky (TMBS) Rectifier:  A Schottky Rectifier with High than Parallel Plane Breakdown Voltage

TR-94-016

Yield Loss Mechanisms in MOS-Gated Power Devices

TR-94-017

Design Optimization of Large Area MOS-Gated Power Devices Using Wager Repair Techniques

TR-94-018

Optimization of RESURF Effect in DI Lateral IGBT

TR-94-019

Low Resistivity As-Deposited Ohmic Contacts to 3C-SiC

TR-94-020

A Novel Method for Etching Trenches in Silicon Carbide

TR-94-021

Cryogenic Operation of Power Bipolar Transistors

TR-94-022

Vertical Schottky Barrier Diodes on 3C-SiC Grown on Si

TR-94-023

Abstracts Submitted to ISPSD'95

TR-94-024

Reverse Biased Safe Operating Area of Emitter Switched Thyristors

TR-94-025

The Dual Gate Base Resistance Controlled Thyristor

TR-94-026

High Voltage 4H-SiC Schottky Barrier Diodes

TR-94-027

Cryogenic Operation of Asymmetric Field Controlled Thyristors

TR-95-001

Critical Nature of Exide/Interface Quality for SiC Power Devices

TR-95-002

The Dual Channel EST/BRT:  A New High Voltage MOS Gated Thyristor Structure

TR-95-003

A 60 Volt TMBS Rectifier Structure

TR-95-004

An Ultra-Low on-Resistance Trench MOSFET Structure

TR-95-005

Cryogenic Operation of Static Induction (SIT/SITH) Devices

TR-95-006

Comparison of Linear and Circular Cell Dual Channel Emitter Switched Thyristors

TR-95-007

Integral Diodes In  Lateral DI Power Devices

TR-95-008

The Dual-Gate BRT

TR-95-009

A Planar, Nearly Ideal, SiC Device Edge Termination

TR-95-010

On the Presence of Aluminum in thermally Grown Oxides on 6H-Silicon Carbide

TR-95-011

High Voltage (450V) 6H-SiC Buried Gate FET (BG-FET)

TR-95-012

Argon Implanted SiC Device Edge Termination:  Modelling, Analysis and Experimental Results

TR-95-013

Planar, High Voltage, Ion Implanted 6H-SiC P-N Junction Diodes

TR-95-014

High Quality Oxides on 6H-SiC Silicon Carbide using Rapid Thermal Chemical Vapor Deposition

TR-95-015

Bringing Intelligent Power Control to the Information Age

TR-95-016

Planar, Ion Implanted, High Voltage 6H-SiC Junction Diodes

TR-95-017

Step Drift Doping Profile for High Voltage DI Lateral Power Devices

TR-95-018

The Floating Base Thyristor

TR-95-019

Output Characteristics of the Dual Channel EST

TR-95-020

Trench Gate Process Technology

NUMBER

                                                             TITLE

TR-95-021

Planar Edge Termination for 4H-Silicon Carbide Devices

TR-95-022

Reactive Ion Etching of Trenches in 6H-SiC

TR-95-023

The Floating Base Thyristor

TR-95-024

The SIMEST:  An EST Structure without Parasitic Thyristor Achieved using SIMOX Technology

TR-95-025

The DI Lateral Insulated Gate Field Controlled Thyristor (LIGFT)

TR-95-026

Nitrogen Implanted High Voltage, Planar, 6H-SiC N⁺P Junction Diodes

TR-95-027

A Planar MOS-Gated AC Switch Structure

TR-95-028

The Dual Gate Emitter Switched Thyristor (DG-EST)

TR-95-029

Cryogenic Operation of Power Junction Field Effect Transistors

TR-95-030

Prospects for Development of SiC Power Devices

TR-95-031

High Quality Oxides on 6H-Silicon Carbide using Rapid Thermal Chemical Vapor Deposition

TR-95-032

High voltage (450V) 6H-SiC Substrate Gate JFET (SG-JFET

TR-95-033

Argon Implanted SiC Device Edge Termination:  Modelling, Analysis and Experimental Results

TR-95-034

Planar, High Voltage, Boron Implanted 6H-SiC P-N Junction Diodes

TR-95-035

The SIMEST:  A New EST Structure without Parasitic Thyristor Achieved using SIMOX Technology

TR-95-036

A Planar MOS-Gated AC Switch

TR-95-037

The SIMEST:  A New MOS-Gated Emitter Switched Thyristor Structure without Parasitic Thyristor Achieved using SIMOX Technology

TR-95-038

Nitrogen Implanted High Voltage, Planar, 6H-SiC N⁺P Junction Diodes

TR-95-039

The DI Lateral Insulated Gate Field Controlled Thyristor (LIGFT)

TR-95-040

The MOS-Gated Floating Base Thyristor:  A New Dual Gate Thyristor with Improved Forward Biased Safe Operating Area

TR-95-041

The Dual-Gate MCT Structure:  A New MCT Structure with Current Saturation Capability

TR-95-042

The Dual Gate EST:  A New MOS-gated Thyristor Structure

TR-95-043

Elimination of the "Birds Beak" in Trench MOS-gate power semiconductor

TR-95-044

Improved Smart Power Discrete Devices Fabricated using SIMOX Technology

TR-95-045

Trends in Power Semiconductor Devices

TR-95-046

EBIC Investigation of Edge Termination Techniques for SI C Power Devices

TR-95-047

Power Transistors

TR-96-001

The SIMEST: A New EST Structure Without Parasitic Thyristor Achieved Using SIMOX Technology

TR-95-002

Nitrogen Implanted High Voltage, Planar, 6H-SiC N⁺-P Junction Diodes

TR-96-003

The DI Lateral Insulated Gate Field Controlled Thyristor (LIGFT)

TR-96-004

EBIC Investigation of Edge Termination Techniques for Silicon Carbide Power

TR-96-005

The Dual-Gate MOS Controlled Thyristor with Current Saturation Capability

TR-96-006

The Dual Gate EST:  A New MOS-Gated Thyristor Structure

TR-96-007

Elimination of the "Birds Beak" in Trench MOS-gate power semiconductor devices

TR-96-008

The MOS-Gate Floating Base Thyristor: A New Dual Gate Thyristor with Improved Forward Biased Safe Operating Area

TR-96-009

A high voltage (450V) 6H-SiC lateral MESFET structure

TR-96-010

EBIC Measurements of Diffusion Lengths in Silicon Carbide

TR-96-011

DLTS Studies On Bulk and Interface Traps in 6H & 4H-SiC

TR-96-012

The Depleted Base Transistor (DBT)

TR-96-013

3.5kV Trench Dual-Gate MOS Controlled Thyristor

TR-96-014

The DI Lateral Segmented Collector LIGBT

TR-96-015

Improved Smart Power Discrete Devices Fabricated using SIMOX Technology

TR-96-016

Achieving High Breakdown Voltages in DI Lateral Power Devices using Step Drift Doping Profile

TR-96-017

Analysis of 0n-state carrier distribution in the DI-LIGBT

TR-96-018

Improved BRT Structures Fabricated using SIMOX Technology

TR-96-019

Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique

TR-96-020

Dielectrically Isolated Lateral Merged PiN Schottky (LMPS) Diodes

TR-96-021

SIMFCT:  A MOS-gated FCT with High Voltage Current Saturation

TR-96-022

Current Saturation Mechanism and FBSOA of the SIMEST

TR-96-023

Comparison of 4kV DC-ESTs and IGBTs

    NUMBER

                                                             TITLE

TR-96-024

Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization By Ion-implantation

TR-96-025

SiC Device Edge Termination using Finite Area Argon Implantation

TR-96-026

The Accumulation Channel driven Bipolar Transistor (ACBT)

TR-96-027

Inversion and Accumulation Mobilities in SiC

TR-96-028

FBSOA of Dielectrically Isolated LDMOSFETs and LIGBTs

TR-96-029

The Accumulation Channel driven Bipolar Transistor (ACBT):  a new MOS-Gated Semiconductor Power Device

TR-96-030

The CRMGT:  A New MOS-Gated Power Switch

TR-96-031

High Voltage Trench Dual-Gate MOS Controlled Thyristor

TR-96-032

Bilateral MOS-Gated Thyristor

TR-96-033

Reverse blocking lateral MOS-gated switches for AC power control applications

TR-96-034

A Silicon Carbide LOCOS Process Using Enhanced Thermal Oxidation by Argon Implantation

TR-96-035

A Unified Analysis of Trench MOS-Bipolar Devices

TR-96-036

P-type 4H and 6H-SiC High Voltage Schottky Barrier Diodes

TR-96-037

FBSOA OF DIELECTRICALLY ISOLATED LDMOSFETs AND LIGBTs

TR-96-038

The Accumulation Channel driven Bipolar Transistor (ACBT):  A new MOS-Gated Semiconductor Power Device

TR-96-039

New Dual Gate-BRT structures with enhanced FBSOA

TR-96-040

A Novel P⁺ Polysilicon/N-SiC Heterojunction Trench Gate Vertical FET

TR-96-041

High Voltage (4kV) Emitter Switched Thyristors

TR-96-042

Analysis of Gate Dielectrics for SiC Power MOSFETs

TR-96-043

600V Dual Gate MCT Structures

TR-96-044

Measurement of Electron and Hole Impact Ionization Coefficients for SiC

TR-96-045

Correlation of the Static and Dynamic Characteristics of the 4.5V Self-Aligned Trench IGBT

TR-96-046

Comparison of high speed DI-LIGBT structures

TR-96-047

Analysis and suppression of latch-up during IGBT mode of DG-BRT operation

TR-96-048

First Order Analysis of Unipolar and Bipolar SiC Power Devices

TR-96-049

Analysis of a High Voltage Heterojunction Gate SiC Field Effect Transistor

TR-96-050

High Voltage P⁺ Polysilicon/N 6H SiC Heterojunction Diodes

TR-97-001

Measurement of Electron and Hole Ionization Coefficients for SiC

TR-97-002

High Voltage 4kV Emitter Switched Thyristors

TR-97-003

Analysis of Gate Dielectrics for SiC Power UMOSFETs

TR-97-004

A Novel P+ Polysilicon/N- SiC Heterojunction Trench Gate Vertical FET

TR-97-005

FBSOA of Dielectrically Isolated LDMOSFETs and LIGBTs

TR-97-006

600V Dual Gate MCT Structures

TR-97-007

New Dual Gate BRT Structure with enhanced FBSOA

TR-97-008

Correlation between the Static and Dynamci Characteristics of the 4.5kV Self-Aligned Trench IGBT

TR-97-009

The Accumulation Channel Driven Bipolar Transistor (ACBT)

TR-97-010

The dV/dt Capability of MOS-Gated Thyristors

TR-97-011

Static Induction Transistor: A Personal Viewpoint

TR-97-012

Lateral N-Channel MOSFETs on 4H-SiC

TR-97-013

Inversion Layer Mobility in SiC MOSFETs

TR-97-014

High Voltage Planar 6H-SiC ACCUFET

TR-97-015

A Planar Lateral Channel SiC Vertical High Power JFET

TR-97-016

High Voltage Schottky Barrier Diodes on P-type 4H and 6H-SiC

TR-97-017

Influence of the Trench Corner Design on the Edge Termination of UMOS Power Devices

TR-97-018

The Planar 6H-SiC ACCUFET

TR-97-019

Lateral N-Channel Inversion Mode 4H-SiC MOSFETs

TR-97-020

High Inversion Layer Mobility in 6H-SiC MOSFETs

TR-97-021

Effect of Collector Structure on the FBSOA of the Dielectrically Isolated LIGBT

    NUMBER

                                                             TITLE

TR-97-022

An Experimental Evaluation of the On-state performance of Trench IGBT Designs

TR-97-023

Inversion Layer Mobility in SiC MOSFETs

TR-97-024

High Voltage Planar 6H-SiC ACCUFET

TR-97-025

High Voltage Schottky Barrier Diodes on P-type 4H and 6H-SiC

TR-97-026

Inversion Layer Mobility in SiC MOSFETs

TR-97-027

Cryogenic Operation of Power Schottky Barrier Diodes

TR-97-028

4kV Merged PiN Schottky (MPS) Rectifiers

TR-97-029

Comparison of 6H-SiC and 4H-SiC High Voltage Planar ACCUFETs

TR-97-030

A Low Forward Drop High Voltage Trench MOS Barrier Schottky Rectifier with Linearly Graded Doping Profile

TR-97-031

Impact of VLSI Design Rules on High Voltage (2000V) IGBTs/ESTs

TR-97-032

Influence of Collector Resistance on the performance of Accumulation Channel Driven Bipolar Transistors

TR-97-033

Temperature Dependence of Hole Impact Ionization Coefficients in 4H and 6H SiC

TR-97-034

Analysis of Transitions between Thyristor and IGBT Modes for the Dual Gate BRT

TR-97-035

Role of Defects in producing Negative Temperature dependence of Breakdown Voltage in SiC

TR-97-036

A Planar Lateral Channel SiC Vertical High Power JFET

TR-97-037

Analysis and Optimization of the Planar 6H-SiC ACCUFET

TR-97-038

The Planar Lateral Channel MESFET

TR-98-001

Analytical Model for the Threshold Voltage of Accumulation Channel MOS-Gated Devices

TR-98-002

High Voltage (2kV) Dual-Gate BRT Characteristics

TR-98-003

Phonon Scattering limited Mobility in SiC Inversion Layers

TR-98-004

High Temperature Operation of SiC Planar ACCUFETs

TR-98-005

Impact of VLSI Design Rules on High Voltage (2000V) IGBTs/ESTs

TR-98-006

4kV Merged PiN Schottky (MPS) Rectifiers

TR-98-007

Comparison of 6H-SiC and 4H-SiC High Voltage Planar ACCUFETs

TR-98-008

A Low Forward Drop High Voltage Trench MOS Barrier Schottky Rectifier with Linearly Graded Doping Profile

TR-98-009

Trends in Power Discrete Devices

TR-98-010

1100V Dual-Gate BRT Devices

TR-98-011

The Graded Doped Trench MOS Barrier Schottky Rectifier

TR-98-012

Power Loss Comparison for the IGBT, DG-BRT, and the Dc-EST

TR-98-013

High Voltage, Planar, Field Plate Edge Terminated 4H-SiC PN Junction Diodes

TR-98-014

High Voltage Silicon Carbide Devices

TR-98-015

An improved DC-EST Structure with Diode Diverter

TR-98-016

Influence of Cell Design and Electron Irradiation on the FBSOA of DG-BRT Structures

TR-98-017

Enhancing the Maximum Controllable Current Density of the Accumulation Channel Driven Bipolar Transistor

TR-98-018

Modeling of the dV/dt of the IGBT during Inductive Turn-off

    NUMBER

                                                             TITLE

TR-98-019

MOS Devices for Power Electronic Applications

TR-98-020

High Temperature Operation of SiC Planar ACCUFETs

TR-98-021

Ion Implantation Technology for 6H and 4H Silicon Carbide

TR-98-022

Power Discrete Devices: Future Structures and Materials

TR-98-023

4H SiC Lateral Single Zone RESURF Diodes

TR-98-024

MOS-Bipolar Gate IGBT Operation

TR-98-025

The Graded Doped Power UMOSFET

TR-98-026

A New Wide SOA DC-EST Structure with Diode Diverter

TR-98-027

A Comparative Study of High Voltage (4kV) Power Rectifiers

TR-98-028

High Voltage Ni 4H-SiC Schottky Rectifiers 

TR-98-029

MOS-Bipolar Gate IGBT Operation

TR-98-030

The Recessed Gate IGBT Structure

TR-98-031

A Simple Comprehensive Physics-Based Ramp Recovery Model for High Voltage PiN Rectifiers

TR-98-032

An Experimental Analysis of the Dual-Gate EST

TR-99-001

A New Wide SOA DC-EST Structure with Diode Diverter

TR-99-002

High Voltage Ni 4H-SiC Schottky Rectifiers 

TR-99-003

A Comparative Study of High Voltage (4kV) Power Rectifiers (PiN/MPS/SSD/SPEED)

TR-99-004

The Recessed Gate IGBT Structure

TR-99-005

MOS-Bipolar Gate IGBT Operation

TR-99-006

Theoretical and Experimental Study of the Merged PiN/Schottky (MPS) Rectifier

    NUMBER

                                                             TITLE

TR-99-007

Current Saturation Control in Emitter Switched Thyristors

TR-99-008

Analysis of RESURF Phenomenon in 4H-SiC Lateral Devices

TR-99-009

High Voltage DC-ESTs/IGBTs Designed with Transparent Emitters

TR-99-010

4H SiC Lateral RESURF Devices

TR-99-011

GD-UMOSFET Process Design, Fabrication, and Characterization

TR-00-001

4H SiC Lateral RESURF Devices

TR-00-002

High Voltage Planar ACCUFETs on Silicon Carbide

TR-00-003

The Silicon Planar ACCUFET

TR-00-004

The Planar ACBT

TR-00-005

Analysis of High Voltage 4H-SiC ACCUFET Operation       

TR-00-006

Fabrication of High Voltage 4H-SiC ACCUFETs

TR-00-007

High Voltage 4H-SiC ACCUFET: Experimental Results

TR-00-008

Experimental Results of the Planar ACBT

TR-00-009

The Staggered Gate ACBT

TR-00-010

The Accumulation Channel EST

TR-00-011

Experimental Results of the Silicon Planar ACCUFET

TR-00-012

Lateral 3D RESURF Devices for Power ICs

TR-00-013

RF Analysis of GD-UMOSFET and LD-MOSFET

NUMBER

TITLE

TR-00-014

Thermal Impact of Silicon-28 on Power Devices

TR-00-015

Advances in Power Semiconductor Device Technology

TR-01-01

Fabrication Process fir Recessed Gate Devices

TR-01-02

Characteristics of  Recessed Gate Power MOSFETs

TR-01-03

Characteristics of Recessed Gate IGBTs

TR-01-04

Fabrication Process for 4H-SIC RESURF  Devices

TR-01-05

Characteristics of 4H-SIC RESURF Devices

TR-01-06

Characteristics  of 4H-SIC JBS Rectifiers

TR-01-07

A Novel Device Isolation Technology for 4H-SIC