TWGM Reports

PSRC bylaws require holding a Technical Working Group Meeting. The purpose of this mid-fiscal-year meeting is to enable sponsors to assess progress made in the research by graduate students. This is an interactive meeting where sponsors are encouraged to suggest improvements in the design of experiments and research procedures. During theses meeting, students prepare presentations on their plan of work and provide the results of research conducted up to the mid point of the fiscal year.

Technical Working Group Meeting Reports

TW-91-001A              Large Area MOS-Gated Power Device          December 1991

TW-91-001B               Trench MPS Rectifier Structure                      December 1991

TW-91-001C               1500V/5A EST/BRT Devices                         December 1991

TW-91-001D              Dielectrically Isolated Power Devices           December 1991

TW-91-001E               Silicon Carbide Power Devices                     December 1991

TW-91-001F               Cryogenic Power Device Operation               December 1991

TW-92-001A              Large Area MOS-Gated Power Devices         March 1992

TW-92-001B               Trench MPS Rectifier Structure                      March 1992

TW-92-001C               1500V/5A EST/BRT Devices                         March 1992

TW-92-001D              Dielectrically Isolated Power Devices           March 1992

TW-92-001E               Silicon Carbide Power Devices                     March 1992

TW-92-001F               Cryogenic Power Device Operation               March 1992

TW-92-002A              Power Rectifiers                                             December 1992

TW-92-002B               Large Area MOS-Gated Power Device          December 1992

TW-92-002C               MOS-Gated Thyristors                                    December 1992

TW-92-002D              Silicon Carbide Power Devices                     December 1992

TW-92-002E               Dielectrically Isolated Power Devices           December 1992

TW-92-002F               Cryogenic Power Device Operation               December 1992

TW-92-002G              Safe Operating Area Tester                             December 1992

TW-93-003A              Insulated Gate Bipolar Transistors                 December 1993

TW-93-003B               MOS-Gated Thyristors                                    December 1993

TW-93-003C               Large Area MOS-Gated Power Device          December 1993

TW-93-003D              Silicon Carbide Power Devices                     December 1993

TW-93-003E               Dielectrically Isolated Power ICs                  December 1993

TW-93-003F               Cryogenic Power Device Operation               December 1993

TW-93-003G              AC Solid-State Switch                                    December 1993

TW-93-003H              Applications Research                                    December 1993

TW-94-004                 PSRC Overview                                             December 1994

TW-94-004A              MOS-Gated Thyristors                                    December 1994

TW-94-004B               Dielectrically Isolated Power ICs                  December 1994

TW-94-004C               Solid-State AC Switch                                    December 1994

TW-94-004D              Silicon Carbide Power Devices                     December 1994

TW-94-004E               Trench Gate Devices                                       December 1994

TW-95-A                    MOS-Gated Thyristors                                    December 1995

TW-95-B                     Trench Gate Devices                                       December 1995

TW-95-C                     Solid-State AC Switch                                    December 1995

TW-95-D                    Dielectrically Isolated Power ICs                  December 1995

TW-95-E                     Silicon Carbide Power Devices                     December 1995

TW-96-OV                  PSRC Program Overview                               December 1996

TW-96-A                    MOS-Gated Thyristors                                    December 1996

TW-96-B                     Trench Gate Devices                                       December 1996

TW-96-C                     Dielectrically Isolated Power ICs                  December 1996

TW-96-D                    Silicon Carbide Power Devices                     December 1996

TW-97-OV                  PSRC Program Overview                               December 1997

TW-97-A                    MOS-Gated Thyristors                                    December 1997

TW-97-B                     Trench Gate Devices                                       December 1997

TW-96-C                     Silicon Carbide Power Devices                     December 1997

TW-98-OV                  PSRC Program Overview                               December 1998

TW-98-INST               PSRC Cleanroom Installation                         December 1998

TW-98-A                    MOS-Gated Thyristors                                    December 1998

TW-98-B                     Trench Gate Devices                                       December 1998

TW-98-C                     Silicon Carbide Power Devices                     December 1998

Each report listed above consists of multiple (1-5) sections.